Hans Fischer Senior Fellow
The University of Tokyo
Yasuhiko Arakawa received his B.S., M.S., and Ph.D. degrees in electrical engineering from University of Tokyo, in 1975, 1977 and 1980 respectively. He started his academic carreer by joining the University of Tokyo as an Assistant Professor. From 1993 he was working as a Full Professor at University of Tokyo. Today, Arakawa is Professor of the Research Center for Advanced Science and Technology and Director of the Institute for Nano Quantum Information Electronics at University of Tokyo.
He has served as General Chair for organizing many international conferences including 1998 IEEE Semiconductor Laser Conference, 2001 International Conference on Modulated Semiconductor Structures, 2002 International Conference on Quantum Dots and 2005 International Quantum Electronics Conference. He has worked for several big national projects conducted by METI and MEXT as the project leaders.
- 2007, Fujiwara Prize
- 2006, Wall Street Journal Technology Innovation Runner-Up Award
- 2004, IEEE William Streifer Award
- 2004, Leo Esaki Prize
- 2002, ISCS Quantum Device Award
- 1991, IBM Science Award
Yasuhiko Arakawa achieved pioneering work on semiconductor quantum dot lasers including the original concept, theoretical prediction, and demonstration of high-performance quantum dot lasers. Moreover his contribution to the development of single photon emitters at telecom wavelength and high temperature operation was also important.
- AlN air-bridge photonic crystal nanocavities demonstrating high quality factor. Appl. Phys. Lett. 91 (5), 2007, 051106.
- Low-voltage-operating complementary inverters with C[sub 60] and pentacene transistors on glass substrates. Appl. Phys. Lett. 91 (5), 2007, 053505.
- Unconventional quantum-confined Stark effect in a single GaN quantum dot. Phys. Rev. B 73 (12), 2006.
- Thermooptic switch based on photonic-crystal line-defect waveguides. IEEE Photonics Technology Letters 17 (10), 2005, 2083-2085.
- Formation and optical properties of stacked GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition. Appl. Phys. Lett. 85 (7), 2004, 1262.
- Enhancement of room-temperature photoluminescence in InAs quantum dots. Appl. Phys. Lett. 83 (21), 2003, 4300.
- Stranski-Krastanow growth and optical properties of self-assembled GaN quantum dots. Physics of Semicoductors, 2002, 61-68.
- Progress in GaN-Based Nanostructures for Blue Light Emitting Quantum Dot Lasers and Vertical Cavity Surface Emitting Lasers. IEICE Transactions on Electronics, 2000.
- Characteristics of Double-Heterostructure Lasers in Strong Magnetic Fields. Jpn. J. Appl. Phys. 22 (S1), 1983, 283.
- Optimization of Analogue Optical Repeaters. Institute of Electronics, Information and Communication Engineering, 1979, 629-636.