Ian D. Sharp

Short CV

Ian Sharp received his B.S. and his M.S. in Chemical Engineering and Materials Science and Engineering from University of California, Berkeley in 2002 and 2004. He was awarded his Ph.D. in Materials Science and Engineering also at University of California in 2006. In 2007 Sharp started working at the Walter Schottky Institute at TUM within the group of Prof. Martin Stutzmann. Sharp joined the Lawrence Berkeley National Laboratory as a permanent staff scientist in August 2011.

In September 2017 Ian Sharp returned to the Walter Schottky Institute (Center for Nanotechnology and Nanomaterials) at TUM and was appointed Professor.

Selected Awards

• 2007-2009, Alexander von Humboldt Research
• 2007-2009, Fellowship
• 2003-2006, Intel Robert N. Noyce Fellowship
• 2002-2003, UC Berkeley Materials Science Department Fellowship

Research Interests

Sharp’s research at TUM-IAS and the Walter Schottky Institut will focus on the formation and characterization of bioelectronic and biophotonic systems composed of covalently grafted photosynthetic light harvesting complexes on semiconductor substrates. The aim of this work will be to develop a comprehensive and fundamental understanding of charge transfer processes occurring at the bio-inorganic interface and to exploit such findings for formation of multi-functional structures at the nanoscale.

Selected Publications

• Yi, D. O.; Jhon, M. H.; Sharp, I. D.; Xu, Q.; Yuan, C. W.; Liao, C. Y.; Ager, J. W.; Haller, E. E.; Chrzan, D. C.: Modeling nucleation and growth of encapsulated nanocrystals: Kinetic Monte Carlo simulations and rate theory. Phys. Rev. B 78 (24), 2008.

• Sharp, I. D.; Schoell, S. J.; Hoeb, M.; Brandt, M. S.; Stutzmann, M.: Electronic properties of self-assembled alkyl monolayers on Ge surfaces. Appl. Phys. Lett. 92 (22), 2008, 223306.

• Schoell, S.J.; Howgate, J.; Hoeb, M.; Stutzmann, M.; Brandt, M.S.; Sharp, I.D.: Functionalization of n-type 6H-SiC surfaces with organic silanes. Applied Physics Letters 92, 2008.

• Bracht, H, Silvestri, H.H.; Sharp, I.D.; Haller, E.E.: Self- and foreign-atom diffusion in semiconductor isotope heterostructures. I. Continuum theoretical calculations. Phys. Rev. B 75 (3), 2007.

• Sharp, I. D.; Xu, Q.; Yuan, C. W.; Beeman, J. W.; Ager, J. W.; Chrzan, D. C.; Haller, E. E.: Kinetics of visible light photo-oxidation of Ge nanocrystals: Theory and in situ measurement. Appl. Phys. Lett. 90 (16), 2007, 163118.

• Xu, Q.; Sharp, I. D.; Yuan, C. W.; Yi, D. O.; Liao, C. Y.; Glaeser, A. M.; Minor, A. M.; Beeman, J. W.; Ridgway, M. C.; Kluth, P.; Ager, J. W.; Chrzan, D. C.; Haller, E. E.: Large Melting-Point Hysteresis of Ge Nanocrystals Embedded in SiO 2. Phys. Rev. Lett. 97 (15), 2006.

• Sharp, I. D.; Xu, Q.; Yi, D. O.; Yuan, C. W.; Beeman, J. W.; Yu, K. M.; Ager, J. W.; Chrzan, D. C.; Haller, E. E.: Structural properties of Ge nanocrystals embedded in sapphire. J. Appl. Phys. 100 (11), 2006, 114317.

• Sharp, I. D.; Yi, D. O.; Xu, Q.; Liao, C. Y.; Beeman, J. W.; Liliental-Weber, Z.; Yu, K. M.; Zakharov, D. N.; Ager, J. W.; Chrzan, D. C.; Haller, E. E.: Mechanism of stress relaxation in Ge nanocrystals embedded in SiO[sub 2]. Appl. Phys. Lett. 86 (6), 2005, 063107.

• Sharp, I. D.; Xu, Q.; Liao, C. Y.; Yi, D. O.; Beeman, J. W.; Liliental-Weber, Z.; Yu, K. M.; Zakharov, D. N.; Ager, J. W.; Chrzan, D. C.; Haller, E. E.: Stable, freestanding Ge nanocrystals. J. Appl. Phys. 97 (12), 2005, 124316.