The Focus Group Semiconductor Nanowires presented a joint research program between TUM and the IBM Research Laboratory and aimed to develop an innovative platform for novel nanoelectronic and optoelectronic devices based on scaled III-V semiconductor nanowires.
In this very active, cutting-edge research field, the fellowship deals with the experimental realization, physical characterization and testing of diverse monolithically integrated III-V nanowire systems and devices on Si platform. As such we were to explore e.g. energy-efficient post-CMOS tunnel field effect transistors (TFET), thermoelectric energy conversion (TEC) systems based on nanowires, as well as optoelectronic devices and circuits.
Several complementary techniques and core competences of different groups will be merged in this project, including advanced epitaxial growth methods on Si, electrical, optoelectronic and thermoelectric transport characterization including ultrafast pump-probe experiments, as well as device testing in integrated nanowire (opto-)electronics. These synergetic efforts are expected to lead to advances in the fundamentals of charge carrier dynamics at nanowire-based heterointerfaces, as well as unprecedented, energy-efficient device functionality.
Dr. Heike Riel (IBM Fellow at IBM Zurich Research Laboratory) was a Rudolf Diesel Industry Fellow in the Focus Group Semiconductor Nanowires, hosted by Dr. Gregor Koblmüller and Prof. Alexander W. Holleitner (Walter Schottky Institute, WSI, TUM). This collaboration will significantly benefit from the IBM Ph.D. Fellowship recently granted to Bernhard Loitsch (at WSI).
Gooth, J.; Schaller, V.; Wirths, S.; Schmid, H.; Borg, M.; Bologna, N.; Karg, S.; Riel, H.: Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon. Applied Physics Letters 110 (8), 2017, 083105 more…
Irber, Dominik M.; Seidl, Jakob; Carrad, Damon J.; Becker, Jonathan; Jeon, Nari; Loitsch, Bernhard; Winnerl, Julia; Matich, Sonja; Döblinger, Markus; Tang, Yang; Morkötter, Stefanie; Abstreiter, Gerhard; Finley, Jonathan J.; Grayson, Matthew; Lauhon, Lincoln J.; Koblmüller, Gregor: Quantum Transport and Sub-Band Structure of Modulation-Doped GaAs/AlAs Core–Superlattice Nanowires. Nano Letters 17 (8), 2017, 4886-4893 more…
Koblmüller, Gregor; Mayer, Benedikt; Stettner, Thomas; Abstreiter, Gerhard; Finley, Jonathan J: GaAs–AlGaAs core–shell nanowire lasers on silicon: invited review. Semiconductor Science and Technology 32 (5), 2017, 053001 more…
2016
Holleitner, Alexander W.: Ultrafast optoelectronics in nanowire-based circuits. 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), IEEE, 2016 more…
Karg, Siegfried; Schaller, Vanessa; Gaul, Andrew; Moselund, Kirsten; Schmid, Heinz; Gotsmann, Bernd; Gooth, Johannes; Riel, Heike: Ballistic transport and high thermopower in one-dimensional InAs nanowires. 2016 46th European Solid-State Device Research Conference (ESSDERC), IEEE, 2016 more…
Kinzel, Jörg B.; Schülein, Florian J. R.; Weiß, Matthias; Janker, Lisa; Bühler, Dominik D.; Heigl, Michael; Rudolph, Daniel; Morkötter, Stefanie; Döblinger, Markus; Bichler, Max; Abstreiter, Gerhard; Finley, Jonathan J.; Wixforth, Achim; Koblmüller, Gregor; Krenner, Hubert J.: The Native Material Limit of Electron and Hole Mobilities in Semiconductor Nanowires. ACS Nano 10 (5), 2016, 4942-4953 more…
Speckbacher, Maximilian; Treu, Julian; Whittles, Thomas J.; Linhart, Wojciech M.; Xu, Xiaomo; Saller, Kai; Dhanak, Vinod R.; Abstreiter, Gerhard; Finley, Jonathan J.; Veal, Tim D.; Koblmüller, Gregor: Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires. Nano Letters 16 (8), 2016, 5135-5142 more…
Stettner, T.; Zimmermann, P.; Loitsch, B.; Döblinger, M.; Regler, A.; Mayer, B.; Winnerl, J.; Matich, S.; Riedl, H.; Kaniber, M.; Abstreiter, G.; Koblmüller, G.; Finley, J. J.: Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control. Applied Physics Letters 108 (1), 2016, 011108 more…
Treu, J.; Speckbacher, M.; Saller, K.; Morkötter, S.; Döblinger, M.; Xu, X.; Riedl, H.; Abstreiter, G.; Finley, J. J.; Koblmüller, G.: Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy. Applied Physics Letters 108 (5), 2016, 053110 more…
2015
Brenneis, Andreas; Overbeck, Jan; Treu, Julian; Hertenberger, Simon; Morkötter, Stefanie; Döblinger, Markus; Finley, Jonathan J.; Abstreiter, Gerhard; Koblmüller, Gregor; Holleitner, Alexander W.: Photocurrents in a Single InAs Nanowire/Silicon Heterojunction. ACS Nano 9 (10), 2015, 9849-9858 more…
Cutaia, Davide; Moselund, Kirsten E.; Borg, Mattias; Schmid, Heinz; Gignac, Lynne; Breslin, Chris M.; Karg, Siegfried; Uccelli, Emanuele; Riel, Heike: Vertical InAs-Si Gate-All-Around Tunnel FETs Integrated on Si Using Selective Epitaxy in Nanotube Templates. IEEE Journal of the Electron Devices Society 3 (3), 2015, 176-183 more…
Erhard, N.; Sarwar, A. T. M. Golam; Yang, F.; McComb, D. W.; Myers, R. C.; Holleitner, A. W.: Optical Control of Internal Electric Fields in Band Gap-Graded InGaN Nanowires. Nano Letters 15 (1), 2015, 332-338 more…
Erhard, N.; Zenger, S.; Morkötter, S.; Rudolph, D.; Weiss, M.; Krenner, H. J.; Karl, H.; Abstreiter, G.; Finley, J. J.; Koblmüller, G.; Holleitner, A. W.: Ultrafast Photodetection in the Quantum Wells of Single AlGaAs/GaAs-Based Nanowires. Nano Letters 15 (10), 2015, 6869-6874 more…
Erhard, N.; Sarwar, A. T. M. Golam; Yang, F.; McComb, D. W.; Myers, R. C.; Holleitner, A. W.: Optical Control of Internal Electric Fields in Band Gap-Graded InGaN Nanowires. Nano Letters 15 (1), 2014, 332-338 more…
