Semiconductor Nanowires

The Focus Group Semiconductor Nanowires presents a joint research program between TUM and the IBM Research Laboratory and aims to develop an innovative platform for novel nanoelectronic and optoelectronic devices based on scaled III-V semiconductor nanowires.

In this very active, cutting-edge research field, the fellowship deals with the experimental realization, physical characterization and testing of diverse monolithically integrated III-V nanowire systems and devices on Si platform. As such we will explore e.g. energy-efficient post-CMOS tunnel field effect transistors (TFET), thermoelectric energy conversion (TEC) systems based on nanowires, as well as optoelectronic devices and circuits.

Several complementary techniques and core competences of different groups will be merged in this project, including advanced epitaxial growth methods on Si, electrical, optoelectronic and thermoelectric transport characterization including ultrafast pump-probe experiments, as well as device testing in integrated nanowire (opto-)electronics. These synergetic efforts are expected to lead to advances in the fundamentals of charge carrier dynamics at nanowire-based heterointerfaces, as well as unprecedented, energy-efficient device functionality.

Dr. Heike Riel (IBM Fellow at IBM Zurich Research Laboratory) is a Rudolf Diesel Industry Fellow in the Focus Group Semiconductor Nanowires, hosted by Dr. Gregor Koblmüller and Prof. Alexander W. Holleitner (Walter Schottky Institute, WSI, TUM). This collaboration will significantly benefit from the IBM Ph.D. Fellowship recently granted to Bernhard Loitsch (at WSI).

Doctoral Candidate:
Bernhard Loitsch, Walter Schottky Institute, Hybrid Nanosystems – Nanoscale Optoelectronics